New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect

被引:41
作者
Somani, S
Kasapi, S
Wilsher, K
Lo, W
Sobolewski, R
Gol'tsman, G
机构
[1] Schlumberger Technol, San Jose, CA 95134 USA
[2] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY USA
[3] Moscow State Pedag Univ, Dept Phys, Moscow 119435, Russia
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期
关键词
D O I
10.1116/1.1412899
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (< 1 cps and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal-oxide-semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 mum geometry flip-chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. (C) 2001 American Vacuum Society.
引用
收藏
页码:2766 / 2769
页数:4
相关论文
共 6 条
[1]  
BRUCE M, 1999, P 25 INT S TEST FAIL, P19
[2]   Fabrication and properties of an ultrafast NbN hot-electron single-photon detector [J].
Gol'tsman, G ;
Okunev, O ;
Chulkova, G ;
Lipatov, A ;
Dzardanov, A ;
Smirnov, K ;
Semenov, A ;
Voronov, B ;
Williams, C ;
Sobolewski, R .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2001, 11 (01) :574-577
[3]  
KASH JA, 1988, P I4 INT S TEST FAIL, P1
[4]   Optical probing of flip chip packaged microprocessors [J].
Paniccia, M ;
Rao, RM ;
Yee, WM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3625-3630
[5]   A STUDY OF PHOTON-EMISSION FROM N-CHANNEL MOSFETS [J].
TORIUMI, A ;
YOSHIMI, M ;
IWASE, M ;
AKIYAMA, Y ;
TANIGUCHI, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1501-1508
[6]   Picosecond hot electron light emission from submicron complementary metal-oxide-semiconductor circuits [J].
Tsang, JC ;
Kash, JA .
APPLIED PHYSICS LETTERS, 1997, 70 (07) :889-891