Picosecond hot electron light emission from submicron complementary metal-oxide-semiconductor circuits

Optical emission consisting of pulses with temporal widths of less than 270 ps has been detected from fully functional silicon integrated circuits fabricated using submicron complementary metaloxide-semiconductor (CMOS) logic gates. Emission is observed under normal bias conditions and occurs when the gates are switching. The emission arises from the hot electron populations created by the transient current pulses present in the transistors during switching. The speed and spectral characteristics of the emission suggest future applications in the measurement of timing in high speed CMOS circuits. (C) 1997 American Institute of Physics.