COUPLED MONTE CARLO-DRIFT DIFFUSION ANALYSIS OF HOT-ELECTRON EFFECTS IN MOSFETS

[1] HOT-ELECTRON FLOW IN AN INHOMOGENEOUS FIELD [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 141 - 143

[2] A RIGOROUS TECHNIQUE TO COUPLE MONTE-CARLO AND DRIFT-DIFFUSION MODELS FOR COMPUTATIONALLY EFFICIENT DEVICE SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 392 - 399

[3] EFFECT OF CARRIER DRIFT VELOCITIES ON MEASURED IONIZATION COEFFICIENTS IN AVALANCHING SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04) : 2197 - 2203

[4] SURFACE-ROUGHNESS AT THE SI(100)-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8171 - 8186

[5] ANISOTROPY OF HIGH-FIELD CONDUCTIVITY IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 417 - &

[6] SUBSTRATE CURRENT AT CRYOGENIC TEMPERATURES - MEASUREMENTS AND A TWO-DIMENSIONAL MODEL FOR CMOS TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 64 - 74

[7] NONLOCALITY OF THE ELECTRON IONIZATION COEFFICIENT IN N-MOSFETS - AN ANALYTIC APPROACH [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 399 - 401

[8] HIGMAN JM, UNPUB

[9] Hwang C. G., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P563

[10] ACCURATE ANALYSIS OF IMPACT IONIZATION EFFECTS IN SUBMICROMETER MOSFET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2385 - 2385

[1] HOT-ELECTRON FLOW IN AN INHOMOGENEOUS FIELD [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 141 - 143

[2] A RIGOROUS TECHNIQUE TO COUPLE MONTE-CARLO AND DRIFT-DIFFUSION MODELS FOR COMPUTATIONALLY EFFICIENT DEVICE SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 392 - 399

[3] EFFECT OF CARRIER DRIFT VELOCITIES ON MEASURED IONIZATION COEFFICIENTS IN AVALANCHING SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04) : 2197 - 2203

[4] SURFACE-ROUGHNESS AT THE SI(100)-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8171 - 8186

[5] ANISOTROPY OF HIGH-FIELD CONDUCTIVITY IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 417 - &

[6] SUBSTRATE CURRENT AT CRYOGENIC TEMPERATURES - MEASUREMENTS AND A TWO-DIMENSIONAL MODEL FOR CMOS TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 64 - 74

[7] NONLOCALITY OF THE ELECTRON IONIZATION COEFFICIENT IN N-MOSFETS - AN ANALYTIC APPROACH [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 399 - 401

[8] HIGMAN JM, UNPUB

[9] Hwang C. G., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P563

[10] ACCURATE ANALYSIS OF IMPACT IONIZATION EFFECTS IN SUBMICROMETER MOSFET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2385 - 2385