NONLOCALITY OF THE ELECTRON IONIZATION COEFFICIENT IN N-MOSFETS - AN ANALYTIC APPROACH

被引:13
作者
HIGMAN, JM
KIZILYALLI, IC
HESS, K
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D O I
10.1109/55.757
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:399 / 401
页数:3
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共 14 条
[1]   HOT-ELECTRON FLOW IN AN INHOMOGENEOUS FIELD [J].
ARTAKI, M .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :141-143
[2]   DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING [J].
CHAN, TY ;
KO, PK ;
HU, C .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :551-553
[3]   A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS [J].
CHAN, TY ;
KO, PK ;
HU, C .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :505-507
[4]  
CHYNOWETH AG, 1958, PHYS REV, V109
[5]   SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].
ELMANSY, YA ;
BOOTHROYD, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262
[6]  
ELMANSY YA, 1975, IEDM, P31
[7]  
HIGMAN JM, UNPUB
[8]   SIMPLIFIED DEVICE EQUATIONS AND TRANSPORT-COEFFICIENTS FOR GAAS DEVICE MODELING [J].
KIZILYALLI, IC ;
HESS, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2352-2354
[9]   A NOVEL IMPACT-IONIZATION MODEL FOR 1-MU-M-MOSFET SIMULATION [J].
KUHNERT, R ;
WERNER, C ;
SCHUTZ, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1057-1063
[10]  
SELBERHERR S, 1984, ANAL SIMULATION SEMI, P111