SIMPLIFIED DEVICE EQUATIONS AND TRANSPORT-COEFFICIENTS FOR GAAS DEVICE MODELING

被引:15
作者
KIZILYALLI, IC
HESS, K
机构
关键词
D O I
10.1109/T-ED.1987.23244
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:2352 / 2354
页数:3
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共 14 条
[1]   A THEORY OF ENHANCED IMPACT IONIZATION DUE TO THE GATE FIELD AND MOBILITY DEGRADATION IN THE INVERSION LAYER OF MOSFETS [J].
BRENNAN, K ;
HESS, K .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :86-88
[2]  
BUOT FA, 1983, SOLID STATE ELECTRON, V26, P617, DOI 10.1016/0038-1101(83)90016-3
[3]  
CANALI C, 1985, HOT ELECTRON TRANSPO
[4]   TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS [J].
COOK, RK ;
FREY, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :970-977
[5]   COMMENT ON THE USE OF THE ELECTRON-TEMPERATURE CONCEPT FOR NONLINEAR TRANSPORT PROBLEMS IN SEMICONDUCTOR P-N-JUNCTIONS [J].
HIGMAN, J ;
HESS, K .
SOLID-STATE ELECTRONICS, 1986, 29 (09) :915-918
[6]   ELECTRON-TRANSFER BETWEEN ADJACENT CHANNELS SIMULATED BY ENSEMBLE MONTE-CARLO METHODS [J].
KIZILYALLI, IC ;
HESS, K ;
IAFRATE, GJ .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2395-2398
[7]   SCALING PROPERTIES OF HIGH ELECTRON-MOBILITY TRANSISTORS [J].
KIZILYALLI, IC ;
HESS, K ;
LARSON, JL ;
WIDIGER, DJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1427-1433
[8]  
STANTON CJ, UNPUB PHYS REV B
[9]  
Thornber K. K., 1982, IEEE Electron Device Letters, VEDL-3, P69, DOI 10.1109/EDL.1982.25482
[10]   CALCULATION OF HIGH-FIELD DIFFUSIVITY BY A MANY-PARTICLE MONTE-CARLO SIMULATION INCLUDING A COMPLETE BAND-STRUCTURE FOR GAAS [J].
WANG, T ;
HESS, K .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2793-2795