SCALING PROPERTIES OF HIGH ELECTRON-MOBILITY TRANSISTORS

被引：28

作者：

KIZILYALLI, IC

HESS, K

LARSON, JL

WIDIGER, DJ

机构：

[1] CRAY RES INC, PROD DEV GRP, CHIPPEWA FALLS, WI 54729 USA

[2] IBM, DIV FED SYST, MANASSAS, VA 22110 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1427 / 1433

页数：7

共 9 条

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