SCALED PERFORMANCE FOR SUB-MICRON GAAS-MESFETS

被引：9

作者：

YOKOYAMA, K ^{[1
]}

TOMIZAWA, M ^{[1
]}

YOSHII, A ^{[1
]}

机构：

[1] NIPPON TELEGRAPH TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：536 / 538

页数：3

共 7 条

[1] HIGH-FREQUENCY DIVIDER CIRCUITS USING ION-IMPLANTED GAAS-MESFETS [J].

ANDRADE, T ;

ANDERSON, JR .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) :83-85

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[3]

NAKANISHI H, 1984, 16TH 1984 INT C SOL, P63

[4] ON THE SCALING OF SI-MESFETS [J].

RAM, GV ;

ELMASRY, MI .

ELECTRON DEVICE LETTERS, 1980, 1 (12) :259-262

[5]

TAKADA T, 1985, 1985 IEEE MICR MIL W

[6] BELOW 10 PS/GATE OPERATION WITH BURIED P-LAYER SAINT FETS [J].

YAMASAKI, K ;

KATO, N ;

HIRAYAMA, M .

ELECTRONICS LETTERS, 1984, 20 (25-2) :1029-1031

[7] ACCURATE MODELING FOR SUBMICROMETER-GATE SI AND GAAS-MESFETS USING TWO-DIMENSIONAL PARTICLE SIMULATION [J].

YOSHII, A ;

TOMIZAWA, M ;

YOKOYAMA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1376-1380

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