ACCURATE MODELING FOR SUBMICROMETER-GATE SI AND GAAS-MESFETS USING TWO-DIMENSIONAL PARTICLE SIMULATION

被引:49
作者
YOSHII, A [1 ]
TOMIZAWA, M [1 ]
YOKOYAMA, K [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
关键词
D O I
10.1109/T-ED.1983.21302
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1376 / 1380
页数:5
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