TWO-DIMENSIONAL PARTICLE MODELING OF SUBMICROMETER GATE GAAS-FET NEAR PINCHOFF

被引：25

作者：

PONE, JF ^{[1
]}

CASTAGNE, RC ^{[1
]}

COURAT, JP ^{[1
]}

ARNODO, C ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 08期

关键词：

D O I：

10.1109/T-ED.1982.20863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1244 / 1255

页数：12

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