SPONTANEOUS OSCILLATIONS IN GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS

[1] COBBOLD RSC, 1970, THEORY APPLICATIONS, P80

[2] DILORENZO JV, 1977, 6TH P BIENN CORN EL, P1

[3] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[4] ENGELMANN RWH, 1975, IEDM TECH DIGEST, P351

[5] VFT RELATION OF CW GUNN-EFFECT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) : 62 - +

[6] GLEASON KR, 1978, 1978 WORKSH COMP SEM

[7] PARASITIC BLUK RESISTANCES IN JUNCTION-GATE FETS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11): : 2031 - &

[8] HOT-ELECTRON TRANSPORT EFFECTS IN FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 69 - 73

[9] GRUBIN HL, 1977, 6TH P BIENN CORN EL, P409

[10] GRUBIN HL, 1978, 1978 WORKSH HOT EL P

[1] COBBOLD RSC, 1970, THEORY APPLICATIONS, P80

[2] DILORENZO JV, 1977, 6TH P BIENN CORN EL, P1

[3] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[4] ENGELMANN RWH, 1975, IEDM TECH DIGEST, P351

[5] VFT RELATION OF CW GUNN-EFFECT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) : 62 - +

[6] GLEASON KR, 1978, 1978 WORKSH COMP SEM

[7] PARASITIC BLUK RESISTANCES IN JUNCTION-GATE FETS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11): : 2031 - &

[8] HOT-ELECTRON TRANSPORT EFFECTS IN FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 69 - 73

[9] GRUBIN HL, 1977, 6TH P BIENN CORN EL, P409

[10] GRUBIN HL, 1978, 1978 WORKSH HOT EL P