HOT-ELECTRON TRANSPORT EFFECTS IN FIELD-EFFECT TRANSISTORS

[1] GUNN EFFECT [J]. REPORTS ON PROGRESS IN PHYSICS, 1967, 30 : 97 - +

[2] INFLUENCE OF BOUNDARY-CONDITIONS AND BIAS ON AMPLIFICATION FROM NEGATIVE DIFFERENTIAL MOBILITY ELEMENTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 240 - 247

[3] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 95 - &

[4] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 652 - &

[5] INFLUENCE OF BOUNDARY CONDITIONS ON CURRENT INSTABILITIES IN GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 587 - &

[6] MECHANISM FOR MICROWAVE AMPLIFICATION IN SUPERCRITICALLY DOPED GAAS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (04) : 162 - 164

[7] WINTELER HR, 1967, P INT S GALLIUM ARSE, P228

[1] GUNN EFFECT [J]. REPORTS ON PROGRESS IN PHYSICS, 1967, 30 : 97 - +

[2] INFLUENCE OF BOUNDARY-CONDITIONS AND BIAS ON AMPLIFICATION FROM NEGATIVE DIFFERENTIAL MOBILITY ELEMENTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 240 - 247

[3] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 95 - &

[4] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 652 - &

[5] INFLUENCE OF BOUNDARY CONDITIONS ON CURRENT INSTABILITIES IN GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 587 - &

[6] MECHANISM FOR MICROWAVE AMPLIFICATION IN SUPERCRITICALLY DOPED GAAS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (04) : 162 - 164

[7] WINTELER HR, 1967, P INT S GALLIUM ARSE, P228