INFLUENCE OF BOUNDARY CONDITIONS ON CURRENT INSTABILITIES IN GAAS

被引：66

作者：

SHAW, MP

SOLOMON, PR

GRUBIN, HL

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1969年 / 13卷 / 05期

关键词：

D O I：

10.1147/rd.135.0587

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Excellent agreement is obtained among experiments eliciting variety of GaAs current instabilities and results of computer simulation of GaAs with various fields imposed at cathode boundary; cathode boundary field controls manifestation of instability and determines whether Gunn effect or another instability occurs; model is capable of predicting details of various instabilities, and by comparing experiment with theory, it is possible to determine carrier concentration and drift mobility of each sample.

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页码：587 / &

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