A THEORY OF ENHANCED IMPACT IONIZATION DUE TO THE GATE FIELD AND MOBILITY DEGRADATION IN THE INVERSION LAYER OF MOSFETS

被引：13

作者：

BRENNAN, K

HESS, K

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

[2] DEPT ELECT & COMP ENGN,URBANA,IL 61801

[3] COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期

关键词：

D O I：

10.1109/EDL.1986.26303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：86 / 88

页数：3

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