SURFACE-ROUGHNESS SCATTERING AT THE SI-SIO2 INTERFACE

被引：47

作者：

GOODNICK, SM ^{[1
]}

GANN, RG ^{[1
]}

SITES, JR ^{[1
]}

FERRY, DK ^{[1
]}

WILMSEN, CW ^{[1
]}

FATHY, D ^{[1
]}

KRIVANEK, OL ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85281

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：803 / 808

页数：6

共 19 条

[1] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) :1616-1626

[2] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

SURFACE SCIENCE, 1973, 34 (03) :717-731

[3] EVIDENCE FOR A VALLEY-OCCUPANCY TRANSITION IN SI INVERSION-LAYERS AT LOW ELECTRON-DENSITIES [J].

COLE, T ;

MCCOMBE, BD ;

QUINN, JJ ;

KALIA, RK .

PHYSICAL REVIEW LETTERS, 1981, 46 (16) :1096-1099

[4] INFLUENCE OF A ONE-DIMENSIONAL SUPERLATTICE ON 2-DIMENSIONAL ELECTRON-GAS [J].

COLE, T ;

LAKHANI, AA ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1977, 38 (13) :722-725

[5] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[6] SURFACE-ROUGHNESS INDUCED SCATTERING AND BAND TAILING [J].

GOODNICK, SM ;

GANN, RG ;

FERRY, DK ;

WILMSEN, CW ;

KRIVANEK, OL .

SURFACE SCIENCE, 1982, 113 (1-3) :233-238

[7]

GOODNICK SM, UNPUB

[8]

GREENE RF, 1971, MOL PROCESSES SOLID, P239

[9] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J].

HAHN, PO ;

HENZLER, M .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4122-4127

[10] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS [J].

HARTSTEIN, A ;

NING, TH ;

FOWLER, AB .

SURFACE SCIENCE, 1976, 58 (01) :178-181

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