COMMENT ON THE USE OF THE ELECTRON-TEMPERATURE CONCEPT FOR NONLINEAR TRANSPORT PROBLEMS IN SEMICONDUCTOR P-N-JUNCTIONS

被引：12

作者：

HIGMAN, J ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期

关键词：

D O I：

10.1016/0038-1101(86)90013-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：915 / 918

页数：4

共 16 条

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[8]

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[9] HOT-ELECTRON DIFFUSION IN FINE LINE SEMICONDUCTOR-DEVICES [J].

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