HOT-CARRIER EVALUATION OF MOSFETS IN ULSI CIRCUITS USING THE PHOTON-EMISSION METHOD

被引：20

作者：

URAOKA, Y

TSUTSU, N

MORII, T

TSUJI, K

机构：

[1] Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka, 570, 3–1 -1, Yagumo-Nakamachi

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 08期

关键词：

D O I：

10.1109/16.223701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photon emission from MOSFET's by hot carrier effect under ac operation is studied. A method to estimate the lifetime of MOSFET's in LSI chips, which uses the photon emission, is proposed. This method is based on the experimental data that the lifetime of hot-carrier degradation is described by a universal curve with respect to the photon count at a wavelength of 200 nm. In this paper, quantitative estimations of lifetimes of MOSFET's in a real LSI are demonstrated. This method is applied to the lifetime estimation of a CMOS microprocessor.

引用

页码：1426 / 1431

页数：6

共 16 条

[1] THE INFLUENCE OF THE MEASUREMENT SETUP ON ENHANCED AC HOT CARRIER DEGRADATION OF MOSFETS [J].

BELLENS, R ;

HEREMANS, P ;

GROESENEKEN, G ;

MAES, HE ;

WEBER, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) :310-313

[2]

CHOI JY, 1987, APPL PHYS LETT, V50, P1190

[3] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J].

HOFMANN, KR ;

WERNER, C ;

WEBER, W ;

DORDA, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :691-699

[4] A SIMPLE METHOD TO EVALUATE DEVICE LIFETIME DUE TO HOT-CARRIER EFFECT UNDER DYNAMIC STRESS [J].

HORIUCHI, T ;

MIKOSHIBA, H ;

NAKAMURA, K ;

HAMANO, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :337-339

[5]

HU CM, 1985, IEEE J SOLID-ST CIRC, V20, P295

[6] COMPARISON OF CHARACTERISTICS OF N-CHANNEL AND P-CHANNEL MOSFETS FOR VLSIS [J].

TAKEDA, E ;

NAKAGOME, Y ;

KUME, H ;

SUZUKI, N ;

ASAI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) :675-680

[7]

TAM S, 1984, IEEE T ELECTRON DEVI, V31

[8] A STUDY OF PHOTON-EMISSION FROM N-CHANNEL MOSFETS [J].

TORIUMI, A ;

YOSHIMI, M ;

IWASE, M ;

AKIYAMA, Y ;

TANIGUCHI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1501-1508

[9]

Toriumi A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P56

[10] HOT-CARRIER-INJECTED OXIDE REGION AND HOT-ELECTRON TRAPPING AS THE MAIN CAUSE IN SI NMOSFET DEGRADATION [J].

TSUCHIYA, T ;

KOBAYASHI, T ;

NAKAJIMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :386-391

← 1 2 →