COMPARISON OF CHARACTERISTICS OF N-CHANNEL AND P-CHANNEL MOSFETS FOR VLSIS

被引：60

作者：

TAKEDA, E

NAKAGOME, Y

KUME, H

SUZUKI, N

ASAI, S

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1983.21188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：675 / 680

页数：6

共 13 条

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[9] SHARFETTER DL, 1969, IEEE T ELECTRON DEV, V16, P64
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