HOT-CARRIER-INJECTED OXIDE REGION AND HOT-ELECTRON TRAPPING AS THE MAIN CAUSE IN SI NMOSFET DEGRADATION

被引：86

作者：

TSUCHIYA, T

KOBAYASHI, T

NAKAJIMA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：386 / 391

页数：6

共 14 条

[1] ELECTRON TRAPPING IN SIO2 - AN INJECTION MODE DEPENDENT PHENOMENON [J].

EITAN, B ;

FROHMANBENTCHKOWSKY, D ;

SHAPPIR, J ;

BALOG, M .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :523-525

[2] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J].

FAIR, RB ;

SUN, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :83-94

[3] GENERATION OF INTERFACE STATES BY HOT HOLE INJECTION IN MOSFETS [J].

GESCH, H ;

LEBURTON, JP ;

DORDA, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) :913-918

[4]

Hofmann K. R., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P104

[5] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J].

HSU, FC ;

TAM, S .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :50-52

[6]

Liang M.-S., 1983, International Electron Devices Meeting 1983. Technical Digest, P186

[7]

MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[8] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS [J].

NG, KK ;

TAYLOR, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :871-876

[9]

Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100

[10] NEW HOT-CARRIER INJECTION AND DEVICE DEGRADATION IN SUB-MICRON MOSFETS [J].

TAKEDA, E ;

NAKAGOME, Y ;

KUME, H ;

ASAI, S .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (03) :144-150

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