THE INFLUENCE OF THE MEASUREMENT SETUP ON ENHANCED AC HOT CARRIER DEGRADATION OF MOSFETS

被引：52

作者：

BELLENS, R ^{[1
]}

HEREMANS, P ^{[1
]}

GROESENEKEN, G ^{[1
]}

MAES, HE ^{[1
]}

WEBER, W ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,MICROELECTR,W-8000 MUNICH 83,GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 01期

关键词：

D O I：

10.1109/16.43834

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of the measurement setup on the enhanced ac hot carrier degradation of MOSFET's has been studied. It is shown that the enhanced degradation and substrate current component, which is observed in several ac experiments at the falling edge of the gate pulse under high drain bias, can in some cases be primarily ascribed to a carrier injection due to the forward biasing of the source diode and a simultaneous drain voltage overshoot. The forward biasing of the source diode is not caused by the commonly known latch-up effect, which is triggered by the substrate current, but by an insufficient ac coupling of the source to the ground due to the parasitic inductance of the wiring. It is indeed demonstrated that by putting a capacitor at the drain side of the transistor and grounding the source at the probe tip, the observed enhanced substrate current can be eliminated and the anomalous enhanced degradation reduced accordingly. © 1990 IEEE

引用

页码：310 / 313

页数：4

共 15 条

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