Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes

被引：26

作者：

Li, NY

Hains, CP

Yang, K

Lu, J

Cheng, J

Li, PW

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] I Shou Univ, Dept Elect Engn, Kaohsiung, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17-1.20 mu m double-heterostructure laser diodes with three Ga0.7In0.3N0.003As0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17-1.19 mu m regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2 kA/cm(2) has been successfully demonstrated. (C) 1999 American Institute of Physics. [S0003-6951(99)02834-X].

引用

页码：1051 / 1053

页数：3

共 16 条

[1] Bowing parameter of the band-gap energy of GaNxAs1-x [J].