Catalytic growth of In2O3 nanobelts by vapor transport

被引：56

作者：

Gao, T

Wang, TH

机构：

[1] Univ Oslo, Dept Chem, N-0315 Oslo, Norway

[2] Univ Oslo, Ctr Mat Sci & Nanotechnol, N-0315 Oslo, Norway

[3] Hunan Univ, Micro Nano Technol Res Ctr, Changsha 410082, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 290卷 / 02期

基金：

中国国家自然科学基金;

关键词：

growth models; growth from vapor; nanomaterials; semiconducting indium compounds;

D O I：

10.1016/j.jcrysgro.2006.01.046

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium oxide (In2O3) nanobelts have been fabricated by thermal evaporation of metallic indium powders with the assistance of Au catalysts. The as-synthesized nanobelts are single-crystalline In2O3 with cubic structure, and usually tens of nanometers in thickness, tens to hundreds of nanometers in width, and several hundreds of micrometers in length. The room temperature photoluminescence spectrum of In2O3 nanobelts features a broad emission band at 620 rim, which could be attributed to oxygen deficiencies in the as-synthesized belts. The formation of In2O3 nanobelts follows a catalyst-assistant vapor-liquid-solid growth mechanism, which enables the controlled growth of individual belts on predetermined sites. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：660 / 664

页数：5

共 28 条

[1] Field-effect transistors based on single semiconducting oxide nanobelts [J].