Photoluminescence characterization of InAs/GaAs quantum dot bilayers

被引：2

作者：

Le Ru, EC

Marchioni, U

Bennett, A

Joyce, PB

Jones, TS

Murray, R

机构：

[1] Univ London Imperial Coll Sci & Technol, Dept Phys, Blackett Lab, Ctr Elect Mat & Devices, London SW7 2BZ, England

[2] Univ London Imperial Coll Sci & Technol, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AY, England

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 88卷 / 2-3期

关键词：

quantum dots; multilayer; photoluminescence;

D O I：

10.1016/S0921-5107(01)00881-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the emission from InAs/GaAs quantum dots (QD) bilayer samples with different GaAs spacer thickness. For large spacers. one peak is observed, and the layers are independent. For small spacers, one peak is observed and the layers are then electronically coupled. For intermediate spacers (approximate to 120 Angstrom), two emission peaks are observed and these can be made coincident by tuning the amount of InAs deposited in the second layer. We present a technique using two different excitation wavelengths. which enables us to attribute the emission to each layer, and to show that the shifts are not due to electronic L coupling. Moreover, resonant excitation shows that the wetting layers are also different in each layer. These results indicate that the presence of the first QD layer strongly influences the growth of the second one, leading to very different properties. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：164 / 167

页数：4

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