Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

被引：48

作者：

Brataas, A ^{[1
]}

Nazarov, YV

Inoue, J

Bauer, GEW

机构：

[1] Delft Univ Technol, Appl Phys Lab, NL-2628 CJ Delft, Netherlands

[2] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, NL-2628 CJ Delft, Netherlands

[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[4] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 46401, Japan

来源：

EUROPEAN PHYSICAL JOURNAL B | 1999年 / 9卷 / 03期

关键词：

D O I：

10.1007/s100510050784

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation.

引用

页码：421 / 430

页数：10

共 24 条

[1]

ABRIKOSOV AA, 1962, ZH EKSP TEOR FIZ, V15, P752

[2] Magnetoresistance oscillations due to changing effects in double ferromagnetic tunnel junctions [J].