Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD

被引：11

作者：

Huang, AP

Wang, GJ

Xu, SL

Zhu, MK

Li, GH

Wang, B ^{[1
]}

Yan, H

机构：

[1] Beijing Univ Technol, Quantum Mat Lab, Beijing 100022, Peoples R China

[2] Liaocheng Univ, Coll Phys Sci & Informat Engn, Liaocheng 252059, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 107卷 / 02期

基金：

中国国家自然科学基金;

关键词：

AlN; Cat-CVD; substrate bias; orientation;

D O I：

10.1016/j.mseb.2003.10.085

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, aluminum nitride (AIN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(1 0 0) substrate at low temperatures. Nitrogen (N-2) and hydrogen (H-2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AIN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：161 / 165

页数：5

共 15 条

[1] PLASMA CVD OF AMORPHOUS AIN FROM METALORGANIC AL SOURCE AND PROPERTIES OF THE DEPOSITED FILMS [J].