100 dpi 4-a-Si:H TFTs active-matrix organic polymer light-emitting display

被引:11
作者
Hong, YT [1 ]
Nahm, JY
Kanicki, J
机构
[1] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48105 USA
[2] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
基金
美国国家卫生研究院;
关键词
active-matrix display; amorphous silicon thin-film transistor; current bias-temperature-stress; organic polymer light-emitting devices;
D O I
10.1109/JSTQE.2004.824075
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we report on 100 dpi four hydrogenated amorphous silicon thin-film transistors (4-a-Si:H TFTs) active-matrix organic polymer light-emitting display (AM-PLED). For this display, we have established the operational limitation of our 4-a-Si:H TFTs pixel electrode circuit by performing a load line analysis. Combining this result with the extracted pixel organic polymer light-emitting device (PLED) characteristics, we have found that the change of the AM-PLED pixel operating point, especially of a driving TFT, limits the operational range of AM-PLED pixel. The predicted results are compared with the measured data of 100 dpi monochromatic red light-emitting 4-a-Si:H TFTs AM-PLED. For our AM-PLED, we obtained luminance up to similar to20 cd/m(2) and Commission Internationale de l'Eclairage color coordinates of (0.67, 0.33), which are calculated from the measured AM-PLED electroluminescence spectrum.
引用
收藏
页码:16 / 25
页数:10
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