Charged excitons in ZnSe-based quantum wells

被引：86

作者：

Astakhov, GV ^{[1
]}

Yakovlev, DR

Kochereshko, VP

Ossau, W

Nürnberger, J

Faschinger, W

Landwehr, G

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.60.R8485

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on magneto-optical studies of ZnSe/(Zn,Mg)(S,Se) quantum wells with n-type and p-type modulation doping. Negatively and positively charged excitons related to the heavy-hole exciton states are found and identified by their polarization properties. Negatively charged excitons formed with light-hole exciton states are observed. Their binding energy is about 20% less than that related to the heavy-hole exciton. The exciton and trion parameters (radiative and nonradiative dampings) are determined.

引用

页码：R8485 / R8488

页数：4

共 21 条

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