CuIn1-xAlxSe2 thin films and solar cells

被引：100

作者：

Paulson, PD ^{[1
]}

Haimbodi, MW ^{[1
]}

Marsillac, S ^{[1
]}

Birkmire, RW ^{[1
]}

Shafarman, WN ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 12期

关键词：

D O I：

10.1063/1.1476966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuIn1-xAlxSe2 thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn1-xAlxSe2 films were deposited by four source elemental evaporation with a composition range of 0less than or equal toxless than or equal to0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 mum film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn1-xAlxSe2 film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. Devices with efficiencies greater than 10% are fabricated on CuIn1-xAlxSe2 material over a wide range of Al composition. The best device demonstrated 11% efficiency, and the open circuit voltage increases to 0.73 V. (C) 2002 American Institute of Physics.

引用

页码：10153 / 10156

页数：4

共 12 条

[1] PREPARATION AND ANALYSIS OF THE CUALXIN1-XSE2 SOLID-SOLUTIONS [J].

BODNAR, IV ;

TSYRELCHUK, IN ;

VICTOROV, IA .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1994, 13 (10) :762-764

[2] DEFECT CHEMICAL EXPLANATION FOR THE EFFECT OF AIR ANNEAL ON CDS/CULNSE2 SOLAR-CELL PERFORMANCE [J].

CAHEN, D ;

NOUFI, R .

APPLIED PHYSICS LETTERS, 1989, 54 (06) :558-560

[3] GROWTH AND CHARACTERIZATION OF CUALXIN1-XSE2 MIXED-CRYSTALS [J].

GEBICKI, W ;

IGALSON, M ;

ZAJAC, W ;

TRYKOZKO, R .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1990, 23 (07) :964-965

[4] Cu(InAl)Se2 thin films and devices deposited by multisource evaporation [J].

Haimbodi, MW ;

Gourmelon, E ;

Paulson, PD ;

Birkmire, RW ;

Shafarman, WN .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :454-457

[5]

*INT CTR DIFFR DAT, 1996, ICDD PDF2 DAT

[6] Growth and characterization of Cu(InAl)Se2 by vacuum evaporation [J].

Itoh, F ;

Saitoh, O ;

Kita, M ;

Nagamori, H ;

Oike, H .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 50 (1-4) :119-125

[7] LATTICE VIBRATIONAL, THERMAL AND MECHANICAL-PROPERTIES OF CUINSE2 [J].

NEUMANN, H .

SOLAR CELLS, 1986, 16 (1-4) :399-418

[8] Electrical characterization of Cu(In,Ga)Se2 thin-film solar cells and the role of defects for the device performance [J].

Rau, U ;

Schmidt, M ;

Jasenek, A ;

Hanna, G ;

Schock, HW .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 67 (1-4) :137-143

[9]

Rincon CAD, 1998, INST PHYS CONF SER, V152, P123

[10] Device and material characterization of Cu(InGa)Se-2 solar cells with increasing band gap [J].

Shafarman, WN ;

Klenk, R ;

McCandless, BE .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) :7324-7328

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