CuIn1-xAlxSe2 thin films and solar cells

被引：100

作者：

Paulson, PD ^{[1
]}

Haimbodi, MW ^{[1
]}

Marsillac, S ^{[1
]}

Birkmire, RW ^{[1
]}

Shafarman, WN ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 12期

关键词：

D O I：

10.1063/1.1476966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuIn1-xAlxSe2 thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn1-xAlxSe2 films were deposited by four source elemental evaporation with a composition range of 0less than or equal toxless than or equal to0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 mum film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn1-xAlxSe2 film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. Devices with efficiencies greater than 10% are fabricated on CuIn1-xAlxSe2 material over a wide range of Al composition. The best device demonstrated 11% efficiency, and the open circuit voltage increases to 0.73 V. (C) 2002 American Institute of Physics.

引用

页码：10153 / 10156

页数：4