The irradiation and annealing of Si-doped diamond single crystals

被引：13

作者：

Kiflawi, I

Sittas, G

Kanda, H

Fisher, D

机构：

[1] NIRIM,TSUKUBA,IBARAKI 305,JAPAN

[2] DTC,RES CTR,MAIDENHEAD SL6 6JW,BERKS,ENGLAND

来源：

关键词：

irradiation; annealing; Si-doped diamond;

D O I：

10.1016/S0925-9635(96)00590-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An isochronal annealing study was carried out on electron-irradiated Si-doped high-pressure high-temperature diamonds, measuring PL spectra and the absorption spectra.

引用

页码：146 / 148

页数：3