Growth and characterization of Si-doped diamond single crystals grown by the HTHP method

被引：37

作者：

Sittas, G

Kanda, H

Kiflawi, I

Spear, PM

机构：

[1] NIRIM,TSUKUBA,IBARAKI 305,JAPAN

[2] DTC,RES CTR,MAIDENHEAD SL6 6JW,BERKS,ENGLAND

来源：

关键词：

diamond; silicon; photoluminescence; growth;

D O I：

10.1016/0925-9635(95)00449-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Synthetic diamond single crystals grown by the HTHP method were successfully doped with silicon. Various catalysts were used. The 1.68 eV Si centre was found only in specimens grown with N getters, and the best results were obtained with Fe-containing alloys. Photoluminescence from selected regions of the specimens showed that the presence of N excludes the presence of the Si centre and the intensity of the emission from the Si centre is not growth sector dependent.

引用

页码：866 / 869

页数：4

共 15 条

[1] THE 1.681 EV CENTER IN POLYCRYSTALLINE DIAMOND [J].