Ab initio calculation of hyperfine interactions for the 5A2 excited state of the neutral vacancy in diamond

被引:15
作者
Gerstmann, U [1 ]
Amkreutz, M [1 ]
Overhof, H [1 ]
机构
[1] Univ Gesamthsch Paderborn, Fachbereich Phys, D-33098 Paderborn, Germany
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 12期
关键词
D O I
10.1103/PhysRevB.60.R8446
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the electronic properties and in particular the hyperfine interactions for the (5)A(2) excited state of V-C(0) and for the unrelaxed (4)A(2) ground state of V-C(-) in diamond. We find fair agreement with experimental electron paramagnetic resonance data for the hyperfine interactions of bath defect states. Our results demonstrate that the local spin density apl,approximation yields reliable magnetization densities, not only for the ground states but also for certain excited states of deep defects.
引用
收藏
页码:R8446 / R8448
页数:3
相关论文
共 14 条
[1]   DEFECTS IN DIAMOND - THE UNRELAXED VACANCY AND SUBSTITUTIONAL NITROGEN [J].
BACHELET, GB ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (08) :4736-4744
[2]   AB-INITIO INVESTIGATION OF THE NATIVE DEFECTS IN DIAMOND AND SELF-DIFFUSION [J].
BREUER, SJ ;
BRIDDON, PR .
PHYSICAL REVIEW B, 1995, 51 (11) :6984-6994
[3]   COLOUR CENTRES IN IRRADIATED DIAMONDS .1. [J].
COULSON, CA ;
KEARSLEY, MJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227) :433-454
[4]  
DAVIES G, 1970, J PHYS C SOLID STATE, V3, P3474
[5]   SELF-CONSISTENT IMPURITY CALCULATIONS IN THE ATOMIC-SPHERES APPROXIMATION [J].
GUNNARSSON, O ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1983, 27 (12) :7144-7168
[6]   Electronic structure and hyperfine interactions for deep donors and vacancies in II-VI compound semiconductors [J].
Illgner, M ;
Overhof, H .
PHYSICAL REVIEW B, 1996, 54 (04) :2505-2511
[7]   EPR IDENTIFICATION OF THE NEGATIVELY CHARGED VACANCY IN DIAMOND [J].
ISOYA, J ;
KANDA, H ;
UCHIDA, Y ;
LAWSON, SC ;
YAMASAKI, S ;
ITOH, H ;
MORITA, Y .
PHYSICAL REVIEW B, 1992, 45 (03) :1436-1439
[8]   INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].
KAMINSKA, M ;
SKOWRONSKI, M ;
LAGOWSKI, J ;
PARSEY, JM ;
GATOS, HC .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304
[9]   Lattice relaxation at vacancy aggregates in diamond [J].
Li, LH ;
Lowther, JE .
PHYSICAL REVIEW B, 1996, 53 (17) :11277-11280
[10]   NEUTRAL VACANCY IN SILICON AND DIAMOND - GENERALIZED VALENCE BOND STUDIES [J].
SURRATT, GT ;
GODDARD, WA .
SOLID STATE COMMUNICATIONS, 1977, 22 (07) :413-416