NEUTRAL VACANCY IN SILICON AND DIAMOND - GENERALIZED VALENCE BOND STUDIES

被引：23

作者：

SURRATT, GT ^{[1
]}

GODDARD, WA ^{[1
]}

机构：

[1] CALTECH,ARTHUR AMOS NOYES LAB CHEM PHYS,PASADENA,CA 91125

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 22卷 / 07期

关键词：

D O I：

10.1016/0038-1098(77)90114-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：413 / 416

页数：4

共 14 条

[1] NEUTRAL VACANCY IN DIAMOND [J].

CLARK, CD ;

WALKER, J .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 334 (1597) :241-257

[2] ISOLATED SINGLE VACANCY IN DIAMOND .1. ELECTRONIC STRUCTURE [J].

COULSON, CA ;

LARKINS, FP .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) :2245-&

[3] COLOUR CENTRES IN IRRADIATED DIAMONDS .1. [J].

COULSON, CA ;

KEARSLEY, MJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227) :433-454

[4]

DUNNING TH, 1973, MODERN THEORETICAL C

[5] GENERALIZED VALENCE BOND DESCRIPTION OF BONDING IN LOW-LYING STATES OF MOLECULES [J].

GODDARD, WA ;

DUNNING, TH ;

HUNT, WJ ;

HAY, PJ .

ACCOUNTS OF CHEMICAL RESEARCH, 1973, 6 (11) :368-376

[6] GAUSSIAN-TYPE FUNCTIONS FOR POLYATOMIC SYSTEMS .I. [J].

HUZINAGA, S .

JOURNAL OF CHEMICAL PHYSICS, 1965, 42 (04) :1293-&

[7] MOLECULAR-ORBITAL TREATMENT FOR DEEP LEVELS IN SEMICONDUCTORS - SUBSTITUTIONAL NITROGEN AND LATTICE VACANCY IN DIAMOND [J].

MESSMER, RP ;

WATKINS, GD .

PHYSICAL REVIEW B, 1973, 7 (06) :2568-2590

[8] RELAXATION OF (111)SILICON SURFACE ATOMS FROM STUDIES OF SI4H9 CLUSTERS [J].

REDONDO, A ;

GODDARD, WA ;

MCGILL, TC ;

SURRATT, GT .

SOLID STATE COMMUNICATIONS, 1976, 20 (08) :733-736

[9]

REDONDO A, 1974, PHYS REV B, V10, P1528

[10]

SURRATT G, 1975, THESIS CALIFORNIA I

← 1 2 →