Gateless AlGaN/GaN HEMT response to block co-polymers

被引：18

作者：

Kang, BS

Louche, G

Duran, RS

Gnanou, Y

Pearton, SJ

Ren, F

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 05期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

D O I：

10.1016/j.sse.2003.10.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：851 / 854

页数：4

共 22 条

[1] Ambacher O, 2003, GROUP III-NITRIDES AND THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND APPLICATIONS, P1878, DOI 10.1002/pssc.200303138
[2] AMBRACHER O, 2002, P ECS, V214, P27
[3] Piezoelectric charge densities in AlGaN/GaN HFETs
Asbeck, PM
Yu, ET
Lau, SS
Sullivan, GJ
VanHove, J
Redwing, J
[J]. ELECTRONICS LETTERS, 1997, 33 (14) : 1230 - 1231
[4] OPERATION OF CHEMICALLY SENSITIVE FIELD-EFFECT SENSORS AS A FUNCTION OF THE INSULATOR-ELECTROLYTE INTERFACE
BOUSSE, L
DEROOIJ, NF
BERGVELD, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1263 - 1270
[5] CRC, 1997, CRC HDB CHEM PHYS
[6] Eickhoff M, 2003, GROUP III-NITRIDES AND THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND APPLICATIONS, P1908, DOI 10.1002/pssc.200303139
[7] Eickhoff M, 2001, PHYS STATUS SOLIDI B, V228, P519, DOI 10.1002/1521-3951(200111)228:2<519::AID-PSSB519>3.0.CO
[8] 2-A
[9] A GENERALIZED THEORY OF AN "ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
FUNG, CD
CHEUNG, PW
KO, WH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 8 - 18
[10] Comparison of Pt/GaN and Pt/4H-SiC gas sensors
Kim, J
Gila, BP
Abernathy, CR
Chung, GY
Ren, F
Pearton, SJ
[J]. SOLID-STATE ELECTRONICS, 2003, 47 (09) : 1487 - 1490

← 1 2 3 →