A GENERALIZED THEORY OF AN "ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：275

作者：

FUNG, CD

CHEUNG, PW

KO, WH

机构：

[1] CASE WESTERN RESERVE UNIV,CTR ELECTR DESIGN,CLEVELAND,OH 44106

[2] UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195

[3] CASE WESTERN RESERVE UNIV,DEPT MACROMOLEC SCI,CLEVELAND,OH 44106

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/T-ED.1986.22429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：8 / 18

页数：11

共 32 条

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[8] OPERATION OF CHEMICALLY SENSITIVE FIELD-EFFECT SENSORS AS A FUNCTION OF THE INSULATOR-ELECTROLYTE INTERFACE
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