High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium

被引：3

作者：

Biefeld, RM ^{[1
]}

Chui, HC ^{[1
]}

Hammons, BE ^{[1
]}

Breiland, WG ^{[1
]}

Brennan, TM ^{[1
]}

Jones, ED ^{[1
]}

Kim, MH ^{[1
]}

Grodzinski, P ^{[1
]}

Chang, KH ^{[1
]}

Lee, HC ^{[1
]}

机构：

[1] MOTOROLA INC,PHOENIX CORP RES LABS,TEMPE,AZ 85284

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 163卷 / 03期

关键词：

D O I：

10.1016/0022-0248(95)00984-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown high purity AlGaAs by metalorganic chemical vapor deposition using tertiarybutylarsine (TEA), trimethylgallium, and trimethylaluminum. We have achieved p-type carrier concentrations less than 4 x 10(14) cm(-3) and a mobility of 1015 cm(2)/V . s at 77 K. Photoluminescence measurements at 4 K yielded bound exciton linewidths as narrow as 4.3 meV, the narrowest reported linewidths for AlGaAs grown using TEA. Secondary ion mass spectrometry measurements found C, O, Si, and S concentrations below the instrument detection limits. A two level factorial design was used to investigate the effects of temperature, V/III ratio, and group III partial pressure on the mobility, carrier concentration, and growth rate. High V/III ratios at temperatures between 640-700 degrees C gave the highest quality material. Increasing the V/III ratio caused a decrease in the growth rates of both GaAs and AlGaAs using either arsine or TEA. This dependence can be explained by a competitive adsorption model where excess group V species complete with group III atoms for group III surface sites.

引用

页码：212 / 219

页数：8

共 24 条

[1] FORMATION OF SUPER AS-RICH GAAS(100) SURFACES BY HIGH-TEMPERATURE EXPOSURE TO ARSINE [J].