2x10(6) cm(2)/Vs electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine

被引：12

作者：

Chui, HC ^{[1
]}

Hammons, BE ^{[1
]}

Harff, NE ^{[1
]}

Simmons, JA ^{[1
]}

Sherwin, ME ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.116462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the metalorganic chemical vapor deposition (MOCVD) growth of two-dimensional electron gases (2DEGs) with electron mobilities up to 2.0 X 10(6) cm(2)/V s at 0.3 K. These are the highest mobilities to date for MOCVD materials, and were achieved using a safer replacement precursor for arsine, tertiarybutylarsine (TBA). For structures grown using arsine, we obtained a maximum mobility of 1.0 x 10(6) cm(2)/V s, which although comparable to the best by MOCVD to date, is half that obtained using TBA. Our studies on thick GaAs and AlGaAs layers indicate that the use of TBA in place of arsine reduces both the carbon and donor impurity concentrations. Thus, TBA is not only a safe alternative to arsine, but also produces significantly purer films. (C) 1996 American Institute of Physics.

引用

页码：208 / 210

页数：3

共 22 条

[1] ULTRAHIGH MOBILITY 2-DIMENSIONAL ELECTRON-GAS IN ALXGA1-XAS/GAAS HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].