Negative capacitance of GaAs homojunction far-infrared detectors

被引：98

作者：

Perera, AGU ^{[1
]}

Shen, WZ

Shov, ME

Liu, HC

Buchanan, M

Schaff, WJ

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 21期

关键词：

D O I：

10.1063/1.124169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bias, frequency and temperature-dependent capacitance characteristics of p-GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared detectors are reported. A strong negative capacitance phenomenon has been observed. Unlike in other devices, even up to 1 MHz in HIWIP, the negative capacitance value keeps increasing with frequency, giving a stronger effect. The origin of this effect is believed to be due to the carrier capture and emission at interface states. Fitting data based on charging-discharging current and the inertial conducting current model show good agreement with the experimental observations. (C) 1999 American Institute of Physics. [S0003-6951(99)01121-3].

引用

页码：3167 / 3169

页数：3

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