Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films

被引：558

作者：

Choopun, S

Vispute, RD ^{[1
]}

Yang, W

Sharma, RP

Venkatesan, T

Shen, H

机构：

[1] Univ Maryland, Dept Phys, CSR, College Pk, MD 20742 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 09期

关键词：

D O I：

10.1063/1.1456266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the realization of wide band gap (5-6 eV), single-phase, metastable, and epitaxial MgxZn1-xO thin-film alloys grown on sapphire by pulsed laser deposition. We found that the composition, structure, and band gaps of the MgxZn1-xO thin-film alloys depend critically on the growth temperature. The structural transition from hexagonal to cubic phase has been observed for (Mg content greater than 50 at. %) (1greater than or equal toxgreater than or equal to0.5) which can be achieved by growing the film alloys in the temperature range of 750 degreesC to room temperature. Interestingly, the increase of Mg content in the film has been found to be beneficial for the epitaxial growth at relatively low growth temperature in spite of a large lattice mismatch between sapphire and cubic MgZnO alloys. (C) 2002 American Institute of Physics.

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页码：1529 / 1531

页数：3

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