Computationally efficient implementation of charge sheet model

被引：1

作者：

Gildenblat, G ^{[1
]}

Chen, TL

Bendix, P

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] LSI Log Corp, Milpitas, CA 95035 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 10期

关键词：

D O I：

10.1049/el:19990522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved method for computing the surface potential at the drain end of the MOSFET inversion channel is presented. The approach is generic and can be used with different surface potential based MOSFET models. The new algorithm is verified by comparison with numerical computations and experimental data for deep submicrometre MOSFETs.

引用

页码：843 / 844

页数：2

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