High-current and low-voltage operation of metal-base organic transistors with LiF/Al emitter

被引：45

作者：

Nakayama, K ^{[1
]}

Fujimoto, S ^{[1
]}

Yokoyama, M ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Mat & Life Sci, Div Adv Sci & Biotechnol, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2195947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to improve the performance and clarify the operation mechanism of the vertical-type metal-base organic transistor with a simple organic/metal/organic layered structure, the influence of the electron injection at the emitter electrode interface on modulation current has been investigated using the several emitter metal electrodes. The low injection barrier resulted in large modulation current. When a LiF/Al emitter electrode was used for C-60 organic semiconductor, this device achieved a high current modulation-exceeding 250 mA/cm(2) for a low collector voltage of 3.0 V and a base voltage of 1.25 V. (c) 2006 American Institute of Physics.

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页数：3

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