Fabrication of a vertical-type organic transistor with a planar metal base

被引：69

作者：

Fujimoto, S ^{[1
]}

Nakayama, K ^{[1
]}

Yokoyama, M ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 13期

关键词：

D O I：

10.1063/1.2061866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance vertical-type organic transistors were fabricated using a simple layered structure composed of organic/metal/organic layers. This device could modulate a sheet current between the emitter and collector by a voltage applied to the thin base electrode inserted. When C-60 and perylene derivatives were used for the channel layer, the modulated collector current exceeded 300 mA/cm(2) by application of only several volts of base voltage. The mechanism for this process is discussed from the viewpoint of metal base transistors. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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