Organic-metal-semiconductor transistor with high gain

被引：38

作者：

Meruvia, MS

Hümmelgen, IA

Sartorelli, ML

Pasa, AA

Schwarzacher, W

机构：

[1] Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil

[2] Univ Fed Santa Catarina, Dept Fis, Lab Filmes Finos & Superficies, BR-88040900 Florianopolis, SC, Brazil

[3] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 20期

关键词：

D O I：

10.1063/1.1751218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use evaporated C-60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth. (C) 2004 American Institute of Physics.

引用

页码：3978 / 3980

页数：3

共 11 条

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[2] The spin-valve transistor: a review and outlook [J].