High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures

被引：65

作者：

Chen, CH ^{[1
]}

Chang, SJ

Su, YK

Chi, GC

Sheu, JK

Chen, JF

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 02期

关键词：

CART; DBR; GaN; green LED; MQW;

D O I：

10.1109/2944.999182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Distributed Bragg reflector (DBR) and charge asymmetric resonance tunneling (CART) structures were applied to nitride-based green ligh-emitting diodes (LEDs) to enhance their output efficiency It was found that we can reduce the forward voltage at 20 mA from 3.7 to 3.2 V with the inclusion of CART structure. It was also found that the electroluminescence peak wavelength of the CART LED is less sensitive to the amount of injection current. The output power and external quantum efficiency of the CART LED with DBR structure measured at 20 mA can reach 7.2 mW and 11.25%, respectively.

引用

页码：284 / 288

页数：5

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