Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes

被引：498

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Sugimoto, Y

Kiyoku, H

机构：

[1] Dept. of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 26期

关键词：

D O I：

10.1063/1.117816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT). The threshold current and voltage of the LD were 130 mA and 8 V, respectively, The threshold carrier density was 9 kA/cm(2). The lifetime of the LDs under RT cw operation was 1 s due to large heat generation. Mode hopping of the emission wavelength of the LDs was observed. The average wavelength drift due to temperature increase was 0.066 nm/K between 20 and 70 degrees C, because of the temperature dependence of the gain profile due to band-gap narrowing of the InGaN active layer. (C) 1996 American Institute of Physics.

引用

页码：4056 / 4058

页数：3

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