InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates

被引：241

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Kiyoku, H

Sugimoto, Y

机构：

[1] Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 15期

关键词：

D O I：

10.1063/1.115599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well (MQW) structure laser diodes fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on (111) MgAl2O4 substrates. The mirror facet for a laser cavity was formed by polishing III-V nitride films grown on (111) MgAl2O4 substrates. As an active layer, the InGaN MQW structure was used. The laser threshold current density was 8 kA/cm(2). At a current above laser threshold, stimulated emission was observed with a sharp peak of light output at 410 nm that had a full width at half-maximum of 2.1 nm under pulsed current injection at room temperature. (C) 1996 American Institute of Physics.

引用

页码：2105 / 2107

页数：3

共 18 条

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