INXGA(1-X)N/INYGA(1-Y)N SUPERLATTICES GROWN ON GAN FILMS

被引：165

作者：

NAKAMURA, S

MUKAI, T

SENOH, M

NAGAHAMA, S

IWASA, N

机构：

[1] Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 06期

关键词：

D O I：

10.1063/1.354486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality In0.22Ga0.78N/In0.06Ga0.94N superlattices were grown on GaN films with periods of 60 and 200 angstrom by the two-flow metalorganic chemical-vapor deposition method. The double-crystal x-ray rocking curve measurements showed satellite peaks which indicated the existence of the In0.22Ga0.78N/In0.06Ga0.94N superlattices. The quantum effects were observed through room-temperature photoluminescence (PL) measurements. These PL spectra were compared to theoretical solutions for the In0.22Ga0.78N/In0.06Ga0.94N superlattices.

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页码：3911 / 3915

页数：5

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