ROOM-TEMPERATURE VIOLET STIMULATED-EMISSION FROM OPTICALLY PUMPED ALGAN/GAINN DOUBLE-HETEROSTRUCTURE

被引：102

作者：

AMANO, H

TANAKA, T

KUNII, Y

KATO, K

KIM, ST

AKASAKI, I

机构：

[1] Department of Electrical and Electronic Engineering, Meijo University, Tempaku-ku, Nagoya 468

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.111942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaN/GaInN heterostructure has been fabricated by metalorganic vapor phase epitaxy. We observed room-temperature (RT) violet stimulated emission from an optically pumped double heterostructure (DH) using GaInN as an active layer. The peak wavelength of the stimulated emission at RT from Al0.17Ga0.83N/Ga0.91In0.09N DH is 402.5 nm, and the threshold of excitation power density is about 0.13 MW/cm2.

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页码：1377 / 1379

页数：3

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