ROOM-TEMPERATURE LOW-THRESHOLD SURFACE-STIMULATED EMISSION BY OPTICAL-PUMPING FROM AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE

被引：111

作者：

AMANO, H ^{[1
]}

WATANABE, N ^{[1
]}

KOIDE, N ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] TOYODA GOSEI CO LTD, AICHI 452, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 7B期

关键词：

GAN; ALGAN; ALGAN/GAN DH; OPTICAL PUMPING; STIMULATED EMISSION; VERTICAL CAVITY; REFRACTIVE INDEX;

D O I：

10.1143/JJAP.32.L1000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The difference in the refractive index at around lambda = 0.37 mum between GaN and Al0.1Ga0.9N is found to be about 0.19. With use of AlGaN/GaN double heterostructures, the threshold power for surface-stimulated emission by optical pumping at room temperature has been markedly decreased to about one-twentieth that of a bulk GaN layer. The mechanism of the stimulated emission in this system is discussed.

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页码：L1000 / L1002

页数：3

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