VERTICAL-CAVITY STIMULATED-EMISSION FROM PHOTOPUMPED INGAN/GAN HETEROJUNCTIONS AT ROOM-TEMPERATURE

被引：71

作者：

KHAN, MA ^{[1
]}

KRISHNANKUTTY, S ^{[1
]}

SKOGMAN, RA ^{[1
]}

KUZNIA, JN ^{[1
]}

OLSON, DT ^{[1
]}

GEORGE, T ^{[1
]}

机构：

[1] CALTECH,CTR SPACE MICROELECTR TECHNOL,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of room temperature violet (415 nm) stimulated emission in the vertical cavity mode from photopumped GaN/In0.25Ga0.75N heterojunctions. The InGAN/GaN heterojunction was deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition and was of high enough optical quality to achieve room-temperature stimulated emission. The observed emission intensity was found to be a nonlinear function of incident optical pump power density. At threshold we observe a clear line narrowing of the output optical signal from 20 to 1.5 nm full width at half-maximum.

引用

页码：520 / 521

页数：2

共 5 条

[1] ROOM-TEMPERATURE VIOLET STIMULATED-EMISSION FROM OPTICALLY PUMPED ALGAN/GAINN DOUBLE-HETEROSTRUCTURE
AMANO, H
TANAKA, T
KUNII, Y
KATO, K
KIM, ST
AKASAKI, I
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (11) : 1377 - 1379
[2] STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER
AMANO, H
ASAHI, T
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02): : L205 - L206
[3] KHAN MA, 1991, APPL PHYS LETT, V58, P526, DOI 10.1063/1.104575
[4] VERTICAL-CAVITY, ROOM-TEMPERATURE STIMULATED-EMISSION FROM PHOTOPUMPED GAN FILMS DEPOSITED OVER SAPPHIRE SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
KHAN, MA
OLSON, DT
VANHOVE, JM
KUZNIA, JN
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1515 - 1517
[5] HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
MUKAI, T
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (19) : 2390 - 2392

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