TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM GAN

被引：30

作者：

MATSUMOT.T ^{[1
]}

AOKI, M ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 11期

关键词：

D O I：

10.1143/JJAP.13.1804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1804 / 1807

页数：4

共 11 条

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[6] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J].

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LOGAN, RA ;

DINGLE, R .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3797-&

[7] EFFECTS OF BUILT-IN STRAIN ON LUMINESCENCE AND ABSORPTION-SPECTRA OF GAN EPITAXIAL CRYSTALS [J].

MATSUMOTO, T ;

AOKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) :1583-1588

[8] PAIR LUMINESCENCE FROM ZN-DOPED GAN [J].

MATSUMOTO, T ;

SANO, M ;

AOKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (02) :373-374

[9]

Pankove J. I., 1973, Journal of Luminescence, V7, P114, DOI 10.1016/0022-2313(73)90062-8

[10] LUMINESCENT PROPERTIES OF GAN [J].

PANKOVE, JI ;

BERKEYHEISER, JE ;

MARUSKA, HP ;

WITTKE, J .

SOLID STATE COMMUNICATIONS, 1970, 8 (13) :1051-+

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